Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and oxygen-deficient HfO2–x gate oxide. A increase drain current reduced threshold voltage obtained upon application positive voltage, the opposite negative voltage. The device shows retention properties suitable endurance after repeated operations. Modulation conductance occurs as results between IZO channel, which consequently alters vacancy concentration channel; these vacancies act n-type dopants. For comparison, thin SiO2 layer inserted to prevent only increased result electron charging. These verify modulation mechanism at interface channel. In addition, indicative its potential for non-charge-storage-based application.